News: Microelectronics
EPC2218 and EPC2204 100-V eGaN FETs SiC Power Module And Gate Driver Kit Speeds Inverter Design, Microchip Technology’s AgileSwitch digital programmable gate driver and SP6LI SiC power module kit, How2Power Today, September 2020 issue. Latest Generation 200-V GaN FETs Double The Performance, EPC’s EPC2215 and EPC2207 200-V. The EPC2204 has 25% lower on-resistance, yet is three times smaller in area (at 1.5mm x 2.5mm versus 3.3mm x 3.3mm).
22 September 2020
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – says that it is advancing the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2218 and EPC2204 100V eGaN FETs. Applications include synchronous rectification, class-D audio, infotainment systems, DC–DC converters (hard-switched and resonant), and light detection & ranging (LiDAR) for autonomous cars, robotics and drones.
The EPC2218 (3.2mΩ, 231Apulsed) and the EPC2204 (6mΩ, 125Apulsed) have nearly 20% lower on-resistance (RDS(on) Download g power for mac. ) as well as increased DC ratings compared with prior-generation eGaN FET products. The performance advantage over a benchmark silicon device is even higher.
The EPC2204 has 25% lower on-resistance, yet is three times smaller in area (at 1.5mm x 2.5mm versus 3.3mm x 3.3mm). Download icloud for mac os x 10.6 8. Gate charge (QG) of 6.4nC (typical, at 5VGS) is less than half that of the silicon MOSFET benchmark’s 15nC (typical, at 10VGS) and, like all eGaN FETs, there is no reverse recovery charge (compared with 29nC QRR typical for the silicon MOSFET benchmark at 40V), enabling lower-distortion class-D audio amplifiers, as well as more efficient synchronous rectifiers and motor drives.
“With the clear superiority of these new 100V eGaN FETs, one might expect them to be priced at a premium. However, EPC has priced these state-of-the-art 100V transistors comparable with their aging ancestor, the silicon power MOSFET,” says co-founder & CEO Alex Lidow. “Designers can take advantage of devices that are higher performance, smaller, more thermally efficient and at a comparable cost,” he adds. “The displacement of the power MOSFET with GaN devices continues to accelerate.”
The EPC2218 is priced at $2.09 each and the EPC2204 at $0.99 each (in 2.5k reels), with half-bridge development boards EPC90123 and EPC9097, respectively, both priced at $118.75. All products and boards are available from distributor Digi-Key Corp.
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Visit: www.epc-co.com
EPC advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of EPC2218 and EPC2204100 V eGaN FETs. The applications for these leading-edge devices include synchronous rectification, class-D audio, infotainment systems, DC-DC converters (hard-switched and resonant), and lidar for autonomous cars, robotics, and drones.
The EPC2218 (3.2 mΩ, 231 Apulsed) and the EPC2204 (6 mΩ, 125 Apulsed) have nearly 20% lower RDS(on), as well as increased DC ratings compared with prior generation eGaN FET products. The performance advantage over a benchmark silicon device is even higher.
The EPC2204 has 25% lower on-resistance, yet is three times smaller in size. Gate charge is less than half that of the silicon MOSFET benchmark, and like all eGaN FETs, there is no reverse recovery charge, enabling lower distortion class-D audio amplifiers, as well as more efficient synchronous rectifiers and motor drives.
Price and Availability
Epc Gan Transistors
EPC2218 $2.09 EPC90123 $118.75
EPC2204 $0.99 EPC9097 $118.75
Epc Gan Fets
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