MOSFET – Power, N-Channel 100 V, 42 A, 28 m Features. Low RDS(on). High Current Capability. 100% Avalanche Tested. NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. These Devices are Pb−Free and are RoHS Compliant. Isc N-Channel MOSFET Transistor FDPF3860TFEATURESWith TO-220F packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 38.2m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2. Share - (5PCS) AON6413 MOSFET P-CH 30V 22A 8DFN 6413 (5PCS) AON6413 MOSFET P-CH 30V 22A 8DFN 6413. $4.65 + $6.00 Shipping. Get it by Wed, Oct 7 - Tue, Oct 27 from; Shenzhen, China Need it faster? More shipping options available at checkout. New condition. 30V N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 30A R DS(ON) (at V GS =10V). This NTB6413ANT4G power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 136000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components.
Type Designator: FDPF3N50NZ

Type of Transistor: MOSFET
Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 27 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm
Package: TO220F
FDPF3N50NZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDPF3N50NZ Datasheet (PDF)
0.1. fdpf3n50nz.pdf Size:746K _fairchild_semi
October 2013FDPF3N50NZN-Channel UniFETTM II MOSFET500 V, 3 A, 2.5 Features Description RDS(on) = 2.1 (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM II MOSFET is Fairchild Semiconductors high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 6.2 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ. 2.5 pF
9.1. fdp33n25 fdpf33n25t.pdf Size:1205K _fairchild_semi
October TMUniFETFDP33N25 / FDPF33N25T 250V N-Channel MOSFETFeatures Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 36.8 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 39 pF) stripe, DMOS technology. Fast switchingThis advanced technolog
9.2. fdpf33n25trdtu.pdf Size:448K _fairchild_semi
August 2014FDPF33N25TN-Channel UniFETTM MOSFET250 V, 33 A, 94 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 94 m (Max.) @ VGS = 10 V, ID = 16.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 36.8 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 39 pF)p Download google browser for mac.
9.3. fdpf390n15a.pdf Size:623K _fairchild_semi
July 2011FDPF390N15A N-Channel PowerTrench MOSFET 150V, 15A, 40mFeatures Description RDS(on) = 31m ( Typ.)@ VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performance.
9.4. fdp39n20 fdpf39n20.pdf Size:485K _fairchild_semi
April 2007TMUniFETFDP39N20 / FDPF39N20200V N-Channel MOSFETFeatures Description 39A, 200V, RDS(on) = 0.066 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 38 nC)stripe, DMOS technology. Low Crss ( typical 57 pF)This advanced technology has been especially

9.5. fdp39n20 fdpf39n20tldtu.pdf Size:644K _fairchild_semi Download apple mail app for mac.
August 2014FDP39N20 / FDPF39N20N-Channel UniFETTM MOSFET200 V, 39 A, 66 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 66 m (Max.) @ VGS = 10 V, ID = 19.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 38 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 5

9.6. fdpf320n06l.pdf Size:220K _fairchild_semi
December 2010FDPF320N06LN-Channel PowerTrench MOSFET 60V, 21A, 25mFeatures Description RDS(on) = 20m ( Typ.)@ VGS = 10V, ID = 21A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been RDS(on) = 23m ( Typ.)@ VGS = 5V, ID = 17Aespecially tailored to minimize the on-state resistance and yet maintain superior sw
9.7. fdpf3860t.pdf Size:641K _fairchild_semi
March 2008FDPF3860TtmN-Channel PowerTrench MOSFET 100V, 20A, 38.2mDescription General Description RDS(on) = 38.2m ( MAX ) @ VGS = 10V, ID = 5.9A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet maintain superior sw
9.8. fdpf39n20.pdf Size:274K _inchange_semiconductor
6413 Mosfet De
isc N-Channel MOSFET Transistor FDPF39N20FEATURESWith TO-220F packagingDrain Source Voltage-: V 200VDSSStatic drain-source on-resistance:RDS(on) 66m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
Bookworm adventures free download for mac. 9.9. fdpf390n15a.pdf Size:274K _inchange_semiconductor
isc N-Channel MOSFET Transistor FDPF390N15AFEATURESWith TO-220F packagingDrain Source Voltage-: V 150VDSSStatic drain-source on-resistance:RDS(on) 40m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2
9.10. fdpf3860t.pdf Size:275K _inchange_semiconductor
isc N-Channel MOSFET Transistor FDPF3860TFEATURESWith TO-220F packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 38.2m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2
Datasheet: FDPF2710T, FDPF320N06L, FDPF33N25T, FDPF3860T, STF8236, FDPF390N15A, FDPF39N20, STF8234, IRF530, FDPF44N25T, FDPF51N25, FDPF55N06, FDPF5N50FT, FDPF5N50NZ, FDPF5N50NZF, FDPF5N50NZU, FDPF5N50T.
6413 Mosfet De
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6413 Mosfet Motor
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